Parameter Name	Conditions	Symbol	Rated Value	Unit
IGBT Rated Value
Collector-Emitter Voltage	Ty=25℃	Vess	1200	V
Continuous Collector DC Current	Tc=80℃	lc ncm³	100	A
Collector Repetitive Peak Current	te=1ms	lcsw	200	A
Gate-Emitter Peak Voltage	–	Ves	+/-20	V
lotal Dissipation Power	Te=25℃,Tymx=150℃	Pwb	625	W
Junction to Case Thermal Resistance	Per IGBT	Rm-	0.2	K/W
When TC>80 ℃,derate linearly with a slope of 1.43 A/℃ “When TC>25 ℃,derate linearly with a slope of 5W/℃. Note 1:Recommended frequency of use not greater than 20kHz Note 2:Electrostatic Discharge Sensitivity Level:Class 2.

MODULE PARAMETERS

Parameter Name	Conditions	Symbol	RatedValue	Unit
Dielectric Strength		Vsa	2500	V
Operating Temperature(Case Temperature)		Tae(Case Temperature)	-55~125	℃
Operating Junction Temperature		ljm	-55~150	℃
Storage Temperature		Tstg	-55～150	℃
Weight		M	295-310	9
Module Substrate Material		Cu
Internal Insulation Material		Al₂O₃